Phys. Chem. Chem. Phys., 2015, Advance Article
DOI: 10.1039/C5CP03601A, Paper
DOI: 10.1039/C5CP03601A, Paper
E. Souchier, F. D'Acapito, P. Noe, P. Blaise, M. Bernard, V. Jousseaume
GeSx-based CBRAM devices are studied using synchrotron characterization before and after switching in order to understand the local environment around Ag atoms.
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GeSx-based CBRAM devices are studied using synchrotron characterization before and after switching in order to understand the local environment around Ag atoms.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry