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A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

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Phys. Chem. Chem. Phys., 2016, Advance Article
DOI: 10.1039/C5CP06507K, Communication
Fei Zhou, Yao-Feng Chang, Ying-Chen Chen, Xiaohan Wu, Ye Zhang, Burt Fowler, Jack C. Lee
Localized oxygen deficiency in the "GAP" region facilitated the proton exchange reactions in the SiOx layer and reproducible memory switching at 180 [degree]C.
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