Phys. Chem. Chem. Phys., 2016, 18,700-703
DOI: 10.1039/C5CP06507K, Communication
DOI: 10.1039/C5CP06507K, Communication
Fei Zhou, Yao-Feng Chang, Ying-Chen Chen, Xiaohan Wu, Ye Zhang, Burt Fowler, Jack C. Lee
Localized oxygen deficiency in the "GAP" region facilitated the proton exchange reactions in the SiOx layer and reproducible memory switching at 180 [degree]C.
The content of this RSS Feed (c) The Royal Society of Chemistry
Localized oxygen deficiency in the "GAP" region facilitated the proton exchange reactions in the SiOx layer and reproducible memory switching at 180 [degree]C.
The content of this RSS Feed (c) The Royal Society of Chemistry