Phys. Chem. Chem. Phys., 2015, Accepted Manuscript
DOI: 10.1039/C5CP03605D, Paper
DOI: 10.1039/C5CP03605D, Paper
Pascal Kordt, Sven Stodtmann, Alexander Badinski, Mustapha Al Helwi, Christian Lennartz, Denis Andrienko
Continuous drift-diffusion models are routinely used to optimize organic semiconducting devices. Material properties are incorporated into these models via dependencies of diffusion constants, mobilities, and injection barriers on temperature, charge...
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Continuous drift-diffusion models are routinely used to optimize organic semiconducting devices. Material properties are incorporated into these models via dependencies of diffusion constants, mobilities, and injection barriers on temperature, charge...
The content of this RSS Feed (c) The Royal Society of Chemistry